kbp005m thru kbp10m, 3n246 thru 3n252 vishay general semiconductor document number: 88531 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 glass passivated single-phase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit board ? high surge current capability ? high case dielectric strength ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for switch ing power supply, home appliances, office equipment, and telecommunication applications. mechanical data case: kbpm epoxy meets ul 94v-0 flammability rating terminals: silver plated lead s, solderable per j-std-002 and jesd22-b102 e4 suffix for consumer grade polarity: as marked on body e4 primary characteristics i f(av) 1.5 a v rrm 50 v to 1000 v i fsm 60 a i r 5 a v f 1.0 v t j max. 150 c case style kbpm +~ ~? + ~ ~ ? note: (1) jedec registered values maximum ratings (t a = 25 c unless otherwise noted) parameter symbol kbp 005m kbp 01m kbp 02m kbp 04m kbp 06m kbp 08m kbp 10m unit 3n246 3n247 3n248 3n249 3n250 3n251 3n252 maximum repetitive peak reverse voltage (1) v rrm 50 100 200 400 600 800 1000 v maximum rms voltage (1) v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage (1) v dc 50 100 200 400 600 800 1000 v maximum average forward output rectified current at t a = 40 c i f(av) 1.5 a peak forward surge current single half sine-wave (1) t a = 25 c t j = 150 c i fsm 60 40 a rating for fusing (t < 8.3 ms) i 2 t 10 a 2 s operating junction and storage temperature range (1) t j , t stg - 55 to + 150 c
kbp005m thru kbp10m, 3n246 thru 3n252 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88531 revision: 15-apr-08 2 note: (1) jedec registered values note: (1) thermal resistance from junction to am bient and from junction to lead mounted on p.c.b. with, 0.47 x 0.47" (12 x 12 mm) cop per pads ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol kbp 005m kbp 01m kbp 02m kbp 04m kbp 06m kbp 08m kbp 10m unit 3n246 3n247 3n248 3n249 3n250 3n251 3n252 maximum instantaneous forward voltage drop per diode (1) 1.0 a 1.57 a v f 1.0 1.3 v maximum dc reverse current at rated dc blocking voltage per diode (1) t a = 25 c t a = 125 c i r 5.0 500 a typical junction capacitance per diode 4.0 v, 1 mhz c j 15 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol kbp 005m kbp 01m kbp 02m kbp 04m kbp 06m kbp 08m kbp 10m unit 3n246 3n247 3n248 3n249 3n250 3n251 3n252 typical thermal resistance (1) r ja r jl 40 13 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode kbp06m-e4/45 1.895 45 30 tube kbp06m-e4/51 1.895 51 600 anti-static pvc tray 3n250-e4/45 1.895 45 30 tube 3n250-e4/51 1.895 51 600 anti-static pvc tray figure 1. derating curve output rectified current 0 20 40 60 8 0 100 120 140 150 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 capaciti v e load (per leg) bridge o u tp u t f u ll w a v e rectified c u rrent a v erage (a) am b ient temperat u re (c) p. c . b . m o u nted on 0.47 x 0.47" (12 x 12 mm) copper pads 60 hz resisti v e or ind u cti v e load = 5.0 10 20 i pk i a v figure 2. maximum non-repetitive peak forward surge current per diode 0 10 1 100 10 20 30 40 50 60 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) single half sine- w a v e t j = 150 c t a = 25 c 1.0 cycle
kbp005m thru kbp10m, 3n246 thru 3n252 vishay general semiconductor document number: 88531 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical forward characteristics per diode figure 4. typical reverse leak age characteristics per diode 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 0 0.01 0.1 1 10 60 8 0 100 20 40 percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) t j = 100 c t j = 125 c t j = 25 c figure 5. typical juncti on capacitance per diode 1 0.1 10 100 1 10 100 re v erse v oltage ( v ) j u nction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p polarity sho w n on front side of case: positi v e lead b y b e v eled corner 0.125 x 45 (3.2) 0.600 (15.24) 0.560 (14.22) 0.034 (0. 8 6) 0.02 8 (0.76) 0.105 (2.67) 0.0 8 5 (2.16) 0.160 (4.1) 0.140 (3.6) 0.060 (1.52) 0.460 (11.6 8 ) 0.50 (12.7) mi n . 0.420 (10.67) 0.500 (12.70) 0.460 (11.6 8 ) 0.60 (15.2) mi n . dia. 0.200 (5.0 8 ) 0.1 8 0 (4.57) case style kbpm
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